NJVMJD47T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Collector Emitter Saturation Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.73mm

Max Power Dissipation :

1.56W

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Transistor Type :

NPN

Power - Max :

1.56W

JESD-609 Code :

e3

Base Part Number :

MJD47

Operating Temperature :

-65°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Element Configuration :

Single

Surface Mount :

yes

Height :

2.38mm

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

250V

Current - Collector Cutoff (Max) :

200μA

Radiation Hardening :

No

Polarity/Channel Type :

NPN

Max Collector Current :

1A

Published :

2010

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

350V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Elements :

1

Number of Pins :

3

Case Connection :

COLLECTOR

Length :

6.22mm

Emitter Base Voltage (VEBO) :

5V

Pin Count :

3

Transition Frequency :

10MHz

Collector Emitter Breakdown Voltage :

250V

Frequency - Transition :

10MHz

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63