NJVMJD47T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

1.56W

Collector Base Voltage (VCBO) :

350V

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

250V

Mounting Type :

Surface Mount

Published :

2010

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Factory Lead Time :

8 Weeks

Case Connection :

COLLECTOR

Pin Count :

3

Radiation Hardening :

No

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

250V

Surface Mount :

yes

Terminal Form :

Gull wing

ECCN Code :

EAR99

Number of Pins :

3

Width :

6.73mm

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Base Part Number :

MJD47

Frequency - Transition :

10MHz

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

5V

Power - Max :

1.56W

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Polarity/Channel Type :

NPN

Height :

2.38mm

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Collector Emitter Saturation Voltage :

1V

Max Collector Current :

1A

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Element Configuration :

Single

Operating Temperature :

-65°C~150°C TJ

Length :

6.22mm

Current - Collector Cutoff (Max) :

200μA

Transition Frequency :

10MHz