NJVMJD31CT4G-VF01
- Mfr.Part #
- NJVMJD31CT4G-VF01
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A DPAK
- Stock
- 41,421
- In Stock :
- 41,421
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 50μA
- Transition Frequency :
- 3MHz
- Pbfree Code :
- yes
- Reference Standard :
- AEC-Q101
- Factory Lead Time :
- 22 Weeks
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 2
- Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -65°C~150°C TJ
- Frequency - Transition :
- 3MHz
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Power - Max :
- 1.56W
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Current - Collector (Ic) (Max) :
- 3A
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Transistor Type :
- NPN
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 4V
- Published :
- 2005
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Base Part Number :
- MJD31
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Datasheets
- NJVMJD31CT4G-VF01

NPN -65°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NJVMJD31CT4G-VF01 Overview
In this device, the DC current gain is 25 @ 1A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.There is a 100V maximal voltage in the device due to collector-emitter breakdown.
NJVMJD31CT4G-VF01 Features
the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
a transition frequency of 3MHz
NJVMJD31CT4G-VF01 Applications
There are a lot of ON Semiconductor
NJVMJD31CT4G-VF01 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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