NJVMJD3055T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

8V @ 3.3A, 10A

Collector Base Voltage (VCBO) :

70V

Power Dissipation :

1.75W

ECCN Code :

EAR99

Configuration :

Single

Transistor Type :

NPN

Published :

2006

Collector Emitter Voltage (VCEO) :

60V

Packaging :

Tape and Reel (TR)

Transition Frequency :

2MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

60V

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

50μA

Current - Collector (Ic) (Max) :

10A

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Max Collector Current :

10A

Frequency :

2MHz

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Polarity/Channel Type :

NPN

Max Power Dissipation :

1.75W

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

8 Weeks

Number of Pins :

3

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63