NJVMJD253T4G-VF01

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Case Connection :

COLLECTOR

Frequency - Transition :

40MHz

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Transition Frequency :

40MHz

Packaging :

Tape and Reel (TR)

Operating Temperature :

-65°C~150°C TJ

Surface Mount :

yes

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Configuration :

Single

Voltage - Collector Emitter Breakdown (Max) :

100V

Factory Lead Time :

18 Weeks

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 1V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

Power - Max :

12.5W

Polarity/Channel Type :

PNP

Transistor Element Material :

SILICON

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2007

Series :

Automotive, AEC-Q101

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Number of Elements :

1

Current - Collector (Ic) (Max) :

4A

Transistor Type :

PNP