NGTB30N65IHL2WG

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Mfr.Part #
NGTB30N65IHL2WG
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT TRENCH/FS 650V 60A TO247-3
Stock
3,414
In Stock :
3,414

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Current - Collector Pulsed (Icm) :
120A
Factory Lead Time :
12 Weeks
Mount :
Through Hole
Max Power Dissipation :
300W
Gate Charge :
135nC
Reverse Recovery Time :
430 ns
Package / Case :
TO-247-3
Input Type :
Standard
Operating Temperature :
-55°C~175°C TJ
Vce(on) (Max) @ Vge, Ic :
2.2V @ 15V, 30A
Number of Pins :
3
Packaging :
Tube
Switching Energy :
200μJ (off)
Mounting Type :
Through Hole
Max Collector Current :
60A
IGBT Type :
Trench Field Stop
Lead Free :
Lead Free
Published :
2014
Element Configuration :
Single
Test Condition :
400V, 30A, 10 Ω, 15V
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Collector Emitter Voltage (VCEO) :
650V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Td (on/off) @ 25°C :
-/145ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
300W
Collector Emitter Saturation Voltage :
1.6V
Collector Emitter Breakdown Voltage :
650V
Datasheets
NGTB30N65IHL2WG
Introducing Transistors - IGBTs - Single onsemi NGTB30N65IHL2WG from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Through Hole, NGTB30N65IHL2WG pinout, NGTB30N65IHL2WG datasheet PDF, NGTB30N65IHL2WG amp .Beyond Transistors - IGBTs - Single onsemi NGTB30N65IHL2WG ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NGTB30N65IHL2WG


NGTB30N65IHL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

NGTB30N65IHL2WG             Description


This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co ? packaged free wheeling diode with a low forward voltage.


NGTB30N65IHL2WG            Features


? Extremely Efficient Trench with Fieldstop Technology

? Low Switching Loss Reduces System Power Dissipation

? Optimized for Low Losses in IH Cooker Application

? TJmax = 175 ° C

? Soft, Fast Free Wheeling Diode

? This is a Pb ? Free Device

 

NGTB30N65IHL2WG            Applications


? Inductive Heating

? Soft Switching


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