NGTB15N60R2FG
- Mfr.Part #
- NGTB15N60R2FG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IGBT 600V 24A TO220F-3FS
- Stock
- 2,948
- In Stock :
- 2,948
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Input Type :
- Standard
- RoHS Status :
- ROHS3 Compliant
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 15A
- Gate Charge :
- 80nC
- Reverse Recovery Time :
- 95 ns
- Operating Temperature :
- 175°C TJ
- Collector Emitter Breakdown Voltage :
- 600V
- Power - Max :
- 54W
- Max Collector Current :
- 24A
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1.85V
- Collector Emitter Voltage (VCEO) :
- 2.1V
- Published :
- 2007
- Width :
- 4.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Current - Collector Pulsed (Icm) :
- 60A
- Packaging :
- Tube
- Length :
- 10.16mm
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Package / Case :
- TO-220-3 Full Pack
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Switching Energy :
- 550μJ (on), 220μJ (off)
- Test Condition :
- 300V, 15A, 30 Ω, 15V
- Max Power Dissipation :
- 54W
- Factory Lead Time :
- 4 Weeks
- Td (on/off) @ 25°C :
- 70ns/190ns
- Height :
- 15.87mm
- Pbfree Code :
- yes
- Datasheets
- NGTB15N60R2FG

NGTB15N60R2FG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
NGTB15N60R2FG Description
The NGTB15N60R2FG is an IGBT with 600V, 14A, N-Channel. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
NGTB15N60R2FG Features
-
Diode VF=1.7V typ. (IF=15A)
-
Diode trr=95ns typ.
-
10μs Short Circuit Capability
-
Reverse Conducting II IGBT
-
IGBT VCE(sat)=1.85V typ. (IC=15A, VGE=15V)
-
IGBT tf=75ns typ.
NGTB15N60R2FG Applications
-
General Purpose Inverter
-
It is used in AC and DC motor drives offering speed control.
-
It is used in chopper and inverters.
-
It is used in solar inverters.
-
It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
-
It is used in UPS (Uninterruptible Power Supply) system.
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