NESG250134-T1-AZ

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - Bipolar (BJT) - RF

Supplier Device Package :

3-PowerMiniMold

Radiation Hardening :

No

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Output Power :

800mW

Max Frequency :

10GHz

Min Operating Temperature :

-65°C

Number of Pins :

3

Mount :

Surface Mount

Frequency - Transition :

10GHz

Transistor Type :

NPN

Gain :

23dB

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

80

Mounting Type :

Surface Mount

Package / Case :

TO-243AA

Packaging :

Cut Tape (CT)

Voltage - Collector Emitter Breakdown (Max) :

9.2V

Max Collector Current :

500mA

Emitter Base Voltage (VEBO) :

2.8V

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 100mA 3V

Collector Base Voltage (VCBO) :

20V

Element Configuration :

Single

Continuous Collector Current :

500mA

Power - Max :

1.5W

Frequency :

900MHz

Max Operating Temperature :

150°C

Max Breakdown Voltage :

9.2V

Max Power Dissipation :

1.5W

Power Dissipation :

1.8W

Base Part Number :

NESG2501

Collector Emitter Voltage (VCEO) :

9.2V

Current - Collector (Ic) (Max) :

500mA

Collector Emitter Breakdown Voltage :

9.2V