NE85639-T1-A

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - Bipolar (BJT) - RF

Radiation Hardening :

No

Mounting Type :

Surface Mount

Frequency - Transition :

9GHz

Packaging :

Tape and Reel (TR)

Power - Max :

200mW

Voltage - Collector Emitter Breakdown (Max) :

12V

Supplier Device Package :

SOT-143

Current - Collector (Ic) (Max) :

100mA

Transistor Type :

NPN

Package / Case :

TO-253-4, TO-253AA

Power Dissipation :

200mW

Max Power Dissipation :

200mW

Max Collector Current :

100mA

Polarity :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Noise Figure (dB Typ @ f) :

1.1dB @ 1GHz

Mount :

Surface Mount

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

12V

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 20mA 10V

Max Frequency :

9GHz

Collector Base Voltage (VCBO) :

20V

Number of Pins :

4

Frequency :

9GHz

RoHS Status :

RoHS Compliant

Gain :

13dB

Output Power :

200mW

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

3V

Base Part Number :

NE85639

Max Operating Temperature :

150°C

Min Operating Temperature :

-65°C

Operating Temperature :

150°C TJ