NE85633-T1B-A

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - Bipolar (BJT) - RF

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Transistor Application :

AMPLIFIER

Pin Count :

3

Frequency :

7GHz

Noise Figure (dB Typ @ f) :

1.1dB @ 1GHz

Output Power :

200mW

Mount :

Surface Mount

Configuration :

Single

Max Collector Current :

100mA

Gain :

11.5dB

Power Dissipation :

200mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

12V

Number of Terminations :

3

Current - Collector (Ic) (Max) :

100mA

Transistor Type :

NPN

Mounting Type :

Surface Mount

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 20mA 10V

Base Part Number :

NE85633

Collector Base Voltage (VCBO) :

20V

Lead Free :

Lead Free

Max Power Dissipation :

200mW

Terminal Form :

Gull wing

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

3V

Polarity/Channel Type :

NPN

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Transition Frequency :

7000MHz

Transistor Element Material :

SILICON