NE68819-T1-A

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

Radiation Hardening :

No

Output Power :

125mW

Noise Figure (dB Typ @ f) :

1.7dB ~ 2.5dB @ 2GHz

Min Operating Temperature :

-65°C

Gain :

4 dB

Package / Case :

SOT-523

Collector Base Voltage (VCBO) :

9V

Max Operating Temperature :

150°C

Power Dissipation :

125mW

Packaging :

Cut Tape (CT)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 3mA 1V

Max Breakdown Voltage :

6V

RoHS Status :

RoHS Compliant

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Frequency :

1GHz

Continuous Collector Current :

100mA

Frequency - Transition :

5GHz

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

2V

Lead Free :

Lead Free

Max Collector Current :

100mA

Base Part Number :

NE68819

Max Power Dissipation :

125mW

Collector Emitter Breakdown Voltage :

6V

Collector Emitter Voltage (VCEO) :

6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Mounting Type :

Surface Mount

Element Configuration :

Single

JESD-609 Code :

e6

Transistor Type :

NPN