NE68519-T1

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Application :

AMPLIFIER

Max Collector Current :

30mA

Transition Frequency :

12000MHz

Polarity/Channel Type :

NPN

Gain :

7.5dB

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Max Power Dissipation :

125mW

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

75 @ 10mA 3V

Mounting Type :

Surface Mount

Voltage - Rated DC :

6V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Current Rating :

30mA

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.75

Highest Frequency Band :

S B

Collector-Base Capacitance-Max :

0.7pF

Package / Case :

SOT-523

Lead Free :

Contains Lead

Power Dissipation :

125mW

Frequency - Transition :

12GHz

Reach Compliance Code :

Unknown

Operating Temperature :

150°C TJ

Noise Figure (dB Typ @ f) :

1.5dB ~ 2.5dB @ 2GHz

Number of Terminations :

3

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

6V

Continuous Collector Current :

30mA

Transistor Type :

NPN

Number of Pins :

3

Additional Feature :

LOW NOISE

Terminal Position :

Dual

Base Part Number :

NE68519