NE68139R-T1

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - Bipolar (BJT) - RF

HTS Code :

8541.21.00.75

Number of Terminations :

4

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G4

Terminal Position :

Dual

Operating Temperature :

150°C TJ

Additional Feature :

LOW NOISE

Noise Figure (dB Typ @ f) :

1.2dB ~ 2dB @ 1GHz

Number of Elements :

1

Transition Frequency :

9000MHz

Gain :

13.5dB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector-Base Capacitance-Max :

0.8pF

Packaging :

Cut Tape (CT)

Transistor Element Material :

SILICON

Element Configuration :

Single

Package / Case :

SOT-143R

Base Part Number :

NE68139

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

10V

Transistor Type :

NPN

Reach Compliance Code :

Unknown

Max Power Dissipation :

200mW

Max Breakdown Voltage :

10V

Max Collector Current :

65mA

Frequency - Transition :

9GHz

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 7mA 3V

ECCN Code :

EAR99

Continuous Collector Current :

65mA

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Power Dissipation :

200mW

Case Connection :

COLLECTOR

Mount :

Surface Mount