NE68139-T1

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - Bipolar (BJT) - RF

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Number of Terminations :

4

Max Power Dissipation :

200mW

Number of Elements :

1

Element Configuration :

Single

Power Dissipation :

200mW

Terminal Position :

Dual

Transistor Type :

NPN

Collector-Base Capacitance-Max :

0.8pF

Polarity/Channel Type :

NPN

Package / Case :

TO-253-4, TO-253AA

Noise Figure (dB Typ @ f) :

1.2dB ~ 2dB @ 1GHz

Mount :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Transition Frequency :

9000MHz

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Frequency - Transition :

9GHz

Operating Temperature :

150°C TJ

Packaging :

Cut Tape (CT)

Additional Feature :

LOW NOISE

Gain :

13.5dB

Case Connection :

COLLECTOR

Max Collector Current :

65mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 7mA 3V

Collector Emitter Breakdown Voltage :

10V

Base Part Number :

NE68139

Number of Pins :

4

Max Breakdown Voltage :

10V

Transistor Application :

AMPLIFIER

Continuous Collector Current :

65mA

Terminal Form :

Gull wing

Mounting Type :

Surface Mount