NE68119-T1-A

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - Bipolar (BJT) - RF

Max Operating Temperature :

150°C

Power Dissipation :

100mW

Frequency :

7GHz

Transistor Type :

NPN

Emitter Base Voltage (VEBO) :

1.5V

Operating Temperature :

150°C TJ

Max Collector Current :

65mA

Max Power Dissipation :

100mW

Frequency - Transition :

7GHz

Package / Case :

SOT-523

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain :

10dB

Supplier Device Package :

SOT-523

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 7mA 3V

Lead Free :

Lead Free

Noise Figure (dB Typ @ f) :

1.4dB @ 1GHz

Mounting Type :

Surface Mount

Base Part Number :

NE68119

Mount :

Surface Mount

Number of Elements :

1

Min Operating Temperature :

-55°C

Number of Pins :

3

Power - Max :

100mW

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Max Frequency :

7GHz

Voltage - Collector Emitter Breakdown (Max) :

10V

Polarity :

NPN

Current - Collector (Ic) (Max) :

65mA

Collector Base Voltage (VCBO) :

20V

Collector Emitter Voltage (VCEO) :

10V

Radiation Hardening :

No

Output Power :

100mW