NDD04N60ZT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

9ns

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

600V

Power Dissipation-Max :

83W Tc

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Turn-Off Delay Time :

24 ns

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Turn On Delay Time :

13 ns

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

4.1A Tc

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Height :

2.38mm

Surface Mount :

yes

Contact Plating :

Tin

Continuous Drain Current (ID) :

4.1A

Pulsed Drain Current-Max (IDM) :

20A

Length :

6.73mm

Threshold Voltage :

3.9V

Rds On (Max) @ Id, Vgs :

2 Ω @ 2A, 10V

Number of Pins :

4

Published :

2009

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

2.6A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

6.22mm

Pin Count :

4

Number of Terminations :

2

Factory Lead Time :

12 Weeks

Resistance :

1.8Ohm

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Case Connection :

DRAIN

Number of Elements :

1

Power Dissipation :

83W

Pbfree Code :

yes

Fall Time (Typ) :

15 ns