NDD03N50ZT4G
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- Mfr.Part #
- NDD03N50ZT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2.6A DPAK
- Stock
- 28,370
- In Stock ：
- 28,370
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 329pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 3.3Ohm @ 1.15A, 10V
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A Tc
- FET Type :
- N-Channel
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation-Max :
- 58W Tc
- Supplier Device Package :
- DPAK
- Drain to Source Voltage (Vdss) :
- 500V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- NDD03N50ZT4G
N-Channel Tape & Reel (TR) 3.3Ohm @ 1.15A, 10V ±30V 329pF @ 25V 16nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
NDD03N50ZT4G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 329pF @ 25V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
NDD03N50ZT4G Features
a 500V drain to source voltage (Vdss)
NDD03N50ZT4G Applications
There are a lot of Rochester Electronics, LLC
NDD03N50ZT4G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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