NDD01N60T4G
- Mfr.Part #
- NDD01N60T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 1.5A DPAK
- Stock
- 35,567
- In Stock :
- 35,567
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Tc
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) :
- 600V
- Vgs(th) (Max) @ Id :
- 3.7V @ 50μA
- FET Type :
- N-Channel
- Supplier Device Package :
- DPAK
- Rds On (Max) @ Id, Vgs :
- 8.5Ohm @ 200mA, 10V
- Power Dissipation-Max :
- 46W Tc
- Vgs (Max) :
- ±30V
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 7.2nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 160pF @ 25V
- Datasheets
- NDD01N60T4G

N-Channel Tape & Reel (TR) 8.5Ohm @ 200mA, 10V ±30V 160pF @ 25V 7.2nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
NDD01N60T4G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 160pF @ 25V maximal input capacitance.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
NDD01N60T4G Features
a 600V drain to source voltage (Vdss)
NDD01N60T4G Applications
There are a lot of Rochester Electronics, LLC
NDD01N60T4G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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