NDD02N60ZT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

600V

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1A, 10V

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

Width :

6.22mm

Vgs (Max) :

±30V

JESD-30 Code :

R-PSSO-G2

Rise Time :

7ns

Surface Mount :

yes

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Height :

2.38mm

Power Dissipation-Max :

57W Tc

Published :

2006

Nominal Vgs :

4.5 V

Fall Time (Typ) :

7 ns

REACH SVHC :

No SVHC

Number of Pins :

4

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

4.5V

Continuous Drain Current (ID) :

2.2A

Pin Count :

4

Turn-Off Delay Time :

15 ns

Turn On Delay Time :

9 ns

Case Connection :

DRAIN

Number of Elements :

1

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Power Dissipation :

57W

Number of Terminations :

2

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Resistance :

4.8Ohm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Length :

6.73mm

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 25V

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

9A