NDD04N50ZT4G
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- Mfr.Part #
- NDD04N50ZT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3A DPAK
- Stock
- 11,128
- In Stock ：
- 11,128
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 61W Tc
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 308pF @ 25V
- Drain to Source Voltage (Vdss) :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Supplier Device Package :
- DPAK
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- FET Type :
- N-Channel
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 2.7Ohm @ 1.5A, 10V
- Datasheets
- NDD04N50ZT4G
N-Channel Tape & Reel (TR) 2.7Ohm @ 1.5A, 10V ±30V 308pF @ 25V 12nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
NDD04N50ZT4G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 308pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
NDD04N50ZT4G Features
a 500V drain to source voltage (Vdss)
NDD04N50ZT4G Applications
There are a lot of Rochester Electronics, LLC
NDD04N50ZT4G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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