NDD02N40-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

121pF @ 25V

Pulsed Drain Current-Max (IDM) :

6.9A

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Drain-source On Resistance-Max :

0.0055Ohm

Rds On (Max) @ Id, Vgs :

5.5 Ω @ 220mA, 10V

Continuous Drain Current (ID) :

1.7A

ECCN Code :

EAR99

FET Type :

N-Channel

Factory Lead Time :

18 Weeks

Number of Terminations :

3

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Pin Count :

4

Rise Time :

7ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

JESD-609 Code :

e3

Power Dissipation-Max :

39W Tc

Power Dissipation :

39W

Radiation Hardening :

No

Number of Pins :

4

Transistor Element Material :

SILICON

Packaging :

Tube

RoHS Status :

RoHS Compliant

Surface Mount :

No

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Turn On Delay Time :

5 ns

Fall Time (Typ) :

4 ns

Terminal Finish :

Tin (Sn)

Published :

2010

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Halogen Free :

Halogen Free

Turn-Off Delay Time :

14 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Breakdown Voltage :

400V

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 19 hours ago)

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 10V