NDD02N40T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

121pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

400V

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

120 mJ

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Factory Lead Time :

2 Weeks

Published :

2010

Turn-Off Delay Time :

14 ns

Mounting Type :

Surface Mount

Fall Time (Typ) :

4 ns

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

6.9A

Radiation Hardening :

No

FET Type :

N-Channel

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2V @ 250μA

Halogen Free :

Halogen Free

Turn On Delay Time :

5 ns

Surface Mount :

yes

Drain-source On Resistance-Max :

0.0055Ohm

Rise Time :

7ns

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

400V

Rds On (Max) @ Id, Vgs :

5.5 Ω @ 220mA, 10V

Number of Terminations :

2

Continuous Drain Current (ID) :

1.7A

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 10V

Power Dissipation-Max :

39W Tc

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 19 hours ago)

RoHS Status :

RoHS Compliant

Pbfree Code :

yes