NDD04N60Z-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

15 ns

Packaging :

Tube

Power Dissipation-Max :

83W Tc

ECCN Code :

EAR99

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

2 Ω @ 2A, 10V

Pin Count :

4

Pbfree Code :

yes

JESD-30 Code :

R-PSIP-T3

Case Connection :

DRAIN

Continuous Drain Current (ID) :

4.1A

Radiation Hardening :

No

FET Type :

N-Channel

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Drain Current-Max (Abs) (ID) :

2.6A

Mounting Type :

Through Hole

Surface Mount :

No

Turn On Delay Time :

13 ns

Turn-Off Delay Time :

24 ns

Length :

6.73mm

Pulsed Drain Current-Max (IDM) :

20A

Resistance :

2Ohm

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Height :

6.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

9ns

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

4.1A Tc

Number of Elements :

1

RoHS Status :

RoHS Compliant

Width :

2.38mm

Contact Plating :

Tin

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Factory Lead Time :

19 Weeks

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation :

83W

Number of Pins :

4

Published :

2010

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V