NDB6060L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Nominal Vgs :

2 V

JESD-609 Code :

e3

Element Configuration :

Single

Case Connection :

DRAIN

Voltage - Rated DC :

60V

JESD-30 Code :

R-PSSO-G2

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Mount :

Surface Mount

Weight :

1.31247g

Continuous Drain Current (ID) :

48A

Termination :

SMD/SMT

Operating Temperature :

-65°C~175°C TJ

Packaging :

Tape and Reel (TR)

Current Rating :

48A

Resistance :

25mOhm

Power Dissipation-Max :

100W Tc

Dual Supply Voltage :

60V

Rds On (Max) @ Id, Vgs :

20m Ω @ 24A, 10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Gate to Source Voltage (Vgs) :

16V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

FET Type :

N-Channel

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Width :

6.35mm

Drain to Source Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Length :

6.35mm

Fall Time (Typ) :

161 ns

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mounting Type :

Surface Mount

Turn On Delay Time :

15 ns

ECCN Code :

EAR99

Radiation Hardening :

No

Turn-Off Delay Time :

49 ns

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rise Time :

320ns

Avalanche Energy Rating (Eas) :

200 mJ

Vgs (Max) :

±16V

Factory Lead Time :

8 Weeks

Threshold Voltage :

2V

Power Dissipation :

100W

Pbfree Code :

yes

Transistor Element Material :

SILICON

Height :

6.35mm