NDB6020P
- Mfr.Part #
- NDB6020P
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- P-CHANNEL LOGIC LEVEL ENHANCEMEN
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- FET Type :
- P-Channel
- Published :
- 1998
- JESD-30 Code :
- R-PSSO-G2
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 120 ns
- Power Dissipation-Max :
- 60W Tc
- Pbfree Code :
- yes
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Turn On Delay Time :
- 15 ns
- Terminal Form :
- Gull wing
- Rise Time :
- 27ns
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V
- Terminal Finish :
- Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 70A
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- -24A
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- Length :
- 10.67mm
- Gate to Source Voltage (Vgs) :
- 8V
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 24A
- Weight :
- 1.31247g
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 12A, 4.5V
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -65°C~175°C TJ
- Height :
- 11.33mm
- Drain to Source Breakdown Voltage :
- -20V
- Resistance :
- 50mOhm
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±8V
- Voltage - Rated DC :
- -20V
- Drain to Source Voltage (Vdss) :
- 20V
- Number of Elements :
- 1
- Width :
- 4.83mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1590pF @ 10V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Lead Free :
- Lead Free
- Power Dissipation :
- 60W
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Fall Time (Typ) :
- 70 ns
- Threshold Voltage :
- -700mV
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheets
- NDB6020P

P-Channel Tape & Reel (TR) 50m Ω @ 12A, 4.5V ±8V 1590pF @ 10V 35nC @ 5V 20V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NDB6020P Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make these logic level P-Channel enhancement mode power field-effect transistors. In the avalanche and commutation modes, this very high-density technology has been specifically optimized to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses. These devices are ideal for low-voltage applications including automotive, DC/DC converters, PWM motor controllers, and other battery-powered circuits that require fast switching, minimal in-line power loss, and transient resistance.
NDB6020P Features
-
Critical DC electrical parameters are specified at elevated temperatures.
-
The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
-
175°C maximum junction temperature rating.
-
High-density cell design for extremely low RDS(ON).
-
TO-220 and TO-263 (D2PAK) packages for both through-hole and surface mount applications.
NDB6020P Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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