NDB6020P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Finish :

Tin (Sn)

Power Dissipation :

60W

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

RoHS Compliant

Current Rating :

-24A

Length :

10.67mm

Radiation Hardening :

No

Case Connection :

DRAIN

Fall Time (Typ) :

70 ns

Drain to Source Breakdown Voltage :

-20V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Transistor Element Material :

SILICON

Resistance :

50mOhm

Lead Free :

Lead Free

ECCN Code :

EAR99

Rise Time :

27ns

Operating Temperature :

-65°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

15 ns

Number of Elements :

1

Number of Pins :

3

Transistor Application :

SWITCHING

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±8V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Height :

11.33mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Turn-Off Delay Time :

120 ns

Rds On (Max) @ Id, Vgs :

50m Ω @ 12A, 4.5V

Weight :

1.31247g

Mount :

Surface Mount

Width :

4.83mm

Voltage - Rated DC :

-20V

JESD-30 Code :

R-PSSO-G2

Published :

1998

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

20V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

70A

FET Type :

P-Channel

Threshold Voltage :

-700mV

Gate to Source Voltage (Vgs) :

8V

Mounting Type :

Surface Mount

Power Dissipation-Max :

60W Tc

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 5V

Continuous Drain Current (ID) :

24A

Input Capacitance (Ciss) (Max) @ Vds :

1590pF @ 10V