NDB6030L

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

100 mJ

Terminal Finish :

Tin/Lead (Sn85Pb15)

DS Breakdown Voltage-Min :

30V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Position :

Single

Power Dissipation-Max (Abs) :

75W

Transistor Application :

SWITCHING

ECCN Code :

EAR99

JESD-609 Code :

e0

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

52A

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

156A

Number of Terminals :

2

Polarity/Channel Type :

N-Channel

Operating Temperature (Max) :

175°C

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Drain-source On Resistance-Max :

0.0135Ohm

JEDEC-95 Code :

TO-263AB

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)