NDB6020P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1V @ 250μA

Vgs (Max) :

±8V

Radiation Hardening :

No

Resistance :

50mOhm

Number of Terminations :

2

Turn On Delay Time :

15 ns

Current Rating :

-24A

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Published :

1998

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Drain to Source Breakdown Voltage :

-20V

Voltage - Rated DC :

-20V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 5V

Pulsed Drain Current-Max (IDM) :

70A

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1590pF @ 10V

Weight :

1.31247g

Case Connection :

DRAIN

Number of Pins :

3

Continuous Drain Current (ID) :

24A

Fall Time (Typ) :

70 ns

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Power Dissipation-Max :

60W Tc

Mounting Type :

Surface Mount

Element Configuration :

Single

Transistor Application :

SWITCHING

Additional Feature :

LOGIC LEVEL COMPATIBLE

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

20V

RoHS Status :

RoHS Compliant

Rise Time :

27ns

Threshold Voltage :

-700mV

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

50m Ω @ 12A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.67mm

FET Type :

P-Channel

Height :

11.33mm

Operating Temperature :

-65°C~175°C TJ

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

8V

Mount :

Surface Mount

JESD-609 Code :

e3

Width :

4.83mm

Turn-Off Delay Time :

120 ns

Power Dissipation :

60W

Current - Continuous Drain (Id) @ 25°C :

24A Tc