NDB6060

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

1.31247g

Radiation Hardening :

No

Resistance :

25mOhm

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

20m Ω @ 24A, 10V

Power Dissipation-Max :

100W Tc

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Contact Plating :

Tin

Vgs (Max) :

±16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Fall Time (Typ) :

161 ns

Pbfree Code :

yes

Voltage - Rated DC :

60V

Gate to Source Voltage (Vgs) :

16V

Element Configuration :

Single

Length :

6.35mm

Continuous Drain Current (ID) :

48A

Width :

6.35mm

Packaging :

Tape and Reel (TR)

Rise Time :

320ns

Turn-Off Delay Time :

49 ns

Height :

6.35mm

Power Dissipation :

100W

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Operating Temperature :

-65°C~175°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn On Delay Time :

15 ns

ECCN Code :

EAR99

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Current Rating :

48A

Factory Lead Time :

8 Weeks

Additional Feature :

LOGIC LEVEL COMPATIBLE

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Avalanche Energy Rating (Eas) :

200 mJ

Dual Supply Voltage :

60V

JESD-609 Code :

e3

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Number of Elements :

1

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Termination :

SMD/SMT

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

2V

Nominal Vgs :

2 V

Number of Pins :

3