NDB6060L

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

200 mJ

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Threshold Voltage :

2V

Turn On Delay Time :

15 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Length :

6.35mm

Mount :

Surface Mount

Height :

6.35mm

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Resistance :

25mOhm

Termination :

SMD/SMT

Rise Time :

320ns

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

REACH SVHC :

No SVHC

Factory Lead Time :

8 Weeks

Operating Temperature :

-65°C~175°C TJ

Turn-Off Delay Time :

49 ns

Vgs (Max) :

±16V

Power Dissipation :

100W

JESD-609 Code :

e3

Radiation Hardening :

No

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

20m Ω @ 24A, 10V

Number of Pins :

3

Dual Supply Voltage :

60V

Voltage - Rated DC :

60V

Weight :

1.31247g

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

48A

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

161 ns

Mounting Type :

Surface Mount

Width :

6.35mm

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

60V

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Nominal Vgs :

2 V

Gate to Source Voltage (Vgs) :

16V

Transistor Application :

SWITCHING

Current Rating :

48A

Power Dissipation-Max :

100W Tc

Number of Terminations :

2

Contact Plating :

Tin