NDB6060L
- Mfr.Part #
- NDB6060L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 4
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 100W
- Length :
- 6.35mm
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Nominal Vgs :
- 2 V
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 161 ns
- Element Configuration :
- Single
- Threshold Voltage :
- 2V
- Height :
- 6.35mm
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 5V
- Transistor Application :
- SWITCHING
- Current Rating :
- 48A
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 15 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 25V
- Weight :
- 1.31247g
- Gate to Source Voltage (Vgs) :
- 16V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 24A, 10V
- Rise Time :
- 320ns
- Resistance :
- 25mOhm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- JESD-609 Code :
- e3
- Dual Supply Voltage :
- 60V
- Lead Free :
- Lead Free
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature :
- -65°C~175°C TJ
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Vgs (Max) :
- ±16V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Number of Elements :
- 1
- Termination :
- SMD/SMT
- Power Dissipation-Max :
- 100W Tc
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Continuous Drain Current (ID) :
- 48A
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Width :
- 6.35mm
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 60V
- Turn-Off Delay Time :
- 49 ns
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 60V
- Datasheets
- NDB6060L

N-Channel Tape & Reel (TR) 20m Ω @ 24A, 10V ±16V 2000pF @ 25V 60nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NDB6060L MOSFET Description
ON Semiconductor's patented, high cell density, DMOS technology is used to manufacture this logic level N-Channel enhancement MOSFET NDB6060L. This extremely high-density technology has been specifically designed to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses in avalanche and commutation modes. The NDB6060L is ideal for low voltage applications such as automotive, DC/DC converters, PWM motor controllers, and other battery-powered circuits that require fast switching, low in-line power loss, and transient resistance.
NDB6060L MOSFET Features
-
48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V
-
Low drive requirements allow operation directly from logic drivers
-
175°C maximum junction temperature rating
-
The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
-
TO-220 and TO-263 (D2PAK) packages for both through-hole and surface mount applications
-
Critical DC electrical parameters specified at elevated temperature
-
High-density cell design for extremely low RDS(ON)
-
VGS(TH) < 2.0V.
NDB6060L MOSFET Applications
-
Battery Motor Control
-
Secondary Side Synchronous
-
Three-Phase Bridge for Brushless DC Motor Control
-
Up to 12s Battery Power Tools
-
Buck Converters
-
Power Converters with Multi-Megahertz Operation
-
Other Half and Full-Bridge Topologies
-
Circuit Protection
-
DC-DC Conversion
-
General Power Conversion
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