NDB6060L

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Mfr.Part #
NDB6060L
Manufacturer
Fairchild Semiconductor
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 4
Stock
1
In Stock :
1

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
100W
Length :
6.35mm
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
REACH SVHC :
No SVHC
Nominal Vgs :
2 V
Mounting Type :
Surface Mount
Fall Time (Typ) :
161 ns
Element Configuration :
Single
Threshold Voltage :
2V
Height :
6.35mm
Mount :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 5V
Transistor Application :
SWITCHING
Current Rating :
48A
Pbfree Code :
yes
Transistor Element Material :
SILICON
Turn On Delay Time :
15 ns
Input Capacitance (Ciss) (Max) @ Vds :
2000pF @ 25V
Weight :
1.31247g
Gate to Source Voltage (Vgs) :
16V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
20m Ω @ 24A, 10V
Rise Time :
320ns
Resistance :
25mOhm
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
JESD-609 Code :
e3
Dual Supply Voltage :
60V
Lead Free :
Lead Free
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature :
-65°C~175°C TJ
Factory Lead Time :
8 Weeks
Radiation Hardening :
No
Number of Terminations :
2
Vgs (Max) :
±16V
Vgs(th) (Max) @ Id :
2V @ 250μA
ECCN Code :
EAR99
Number of Pins :
3
JESD-30 Code :
R-PSSO-G2
Additional Feature :
LOGIC LEVEL COMPATIBLE
Number of Elements :
1
Termination :
SMD/SMT
Power Dissipation-Max :
100W Tc
Avalanche Energy Rating (Eas) :
200 mJ
Continuous Drain Current (ID) :
48A
Packaging :
Tape and Reel (TR)
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Width :
6.35mm
Terminal Form :
Gull wing
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
60V
Turn-Off Delay Time :
49 ns
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
48A Tc
Contact Plating :
Tin
Voltage - Rated DC :
60V
Datasheets
NDB6060L
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor NDB6060L from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-65°C~175°C TJ, Number of Terminations:2, Number of Pins:3, NDB6060L pinout, NDB6060L datasheet PDF, NDB6060L amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor NDB6060L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor NDB6060L


N-Channel Tape & Reel (TR) 20m Ω @ 24A, 10V ±16V 2000pF @ 25V 60nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NDB6060L MOSFET Description


ON Semiconductor's patented, high cell density, DMOS technology is used to manufacture this logic level N-Channel enhancement MOSFET NDB6060L. This extremely high-density technology has been specifically designed to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses in avalanche and commutation modes. The NDB6060L is ideal for low voltage applications such as automotive, DC/DC converters, PWM motor controllers, and other battery-powered circuits that require fast switching, low in-line power loss, and transient resistance.



NDB6060L MOSFET Features


  • 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V

  • Low drive requirements allow operation directly from logic drivers

  • 175°C maximum junction temperature rating

  • The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor

  • TO-220 and TO-263 (D2PAK) packages for both through-hole and surface mount applications

  • Critical DC electrical parameters specified at elevated temperature

  • High-density cell design for extremely low RDS(ON)

  • VGS(TH) < 2.0V.



NDB6060L MOSFET Applications


  • Battery Motor Control

  • Secondary Side Synchronous

  • Three-Phase Bridge for Brushless DC Motor Control

  • Up to 12s Battery Power Tools

  • Buck Converters

  • Power Converters with Multi-Megahertz Operation

  • Other Half and Full-Bridge Topologies

  • Circuit Protection

  • DC-DC Conversion

  • General Power Conversion


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