MT3S20TU(TE85L)

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Mfr.Part #
MT3S20TU(TE85L)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
3-SMD, Flat Lead
Datasheet
Download
Description
RF TRANS NPN 12V 7GHZ UFM
Stock
13,899
In Stock :
13,899

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - RF
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Gain :
12dB
Max Breakdown Voltage :
12V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 50mA 5V
Max Collector Current :
80mA
Transistor Type :
NPN
Collector Emitter Voltage (VCEO) :
12V
Published :
2014
RoHS Status :
RoHS Compliant
Polarity/Channel Type :
NPN
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
12V
Mounting Type :
Surface Mount
Factory Lead Time :
12 Weeks
Mount :
Surface Mount
Packaging :
Cut Tape (CT)
Frequency - Transition :
7GHz
Noise Figure (dB Typ @ f) :
1.45dB @ 20mA, 5V
Transition Frequency :
5000MHz
Element Configuration :
Single
Emitter Base Voltage (VEBO) :
1.5V
Reach Compliance Code :
Unknown
Max Power Dissipation :
900mW
Continuous Collector Current :
80mA
Package / Case :
3-SMD, Flat Lead
Datasheets
MT3S20TU(TE85L)
Introducing Transistors - Bipolar (BJT) - RF Toshiba Electronic Devices and Storage Corporation MT3S20TU(TE85L) from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Gain:12dB, Mounting Type:Surface Mount, Package / Case:3-SMD, Flat Lead, MT3S20TU(TE85L) pinout, MT3S20TU(TE85L) datasheet PDF, MT3S20TU(TE85L) amp .Beyond Transistors - Bipolar (BJT) - RF Toshiba Electronic Devices and Storage Corporation MT3S20TU(TE85L) ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation MT3S20TU(TE85L)


MT3S20TU(TE85L) datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Toshiba Semiconductor and Storage stock available at

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