MSD2714AT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Emitter Base Voltage (VEBO) :

3V

Collector Emitter Voltage (VCEO) :

25V

hFE Min :

90

Power - Max :

225mW

Number of Terminations :

3

Number of Pins :

3

ECCN Code :

EAR99

Number of Elements :

1

Collector-Base Capacitance-Max :

0.7pF

Transistor Type :

NPN

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

NPN

Package / Case :

TO-236-3, SC-59, SOT-23-3

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Voltage - Rated DC :

25V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 1mA 6V

Qualification Status :

Not Qualified

Current Rating :

4mA

Max Power Dissipation :

225mW

Published :

2006

Pbfree Code :

yes

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Gain Bandwidth Product :

650MHz

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

25V

Pin Count :

3

Transistor Element Material :

SILICON

Element Configuration :

Single

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

650MHz

Collector Base Voltage (VCBO) :

30V

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3