MSC1175M

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Form :

Flat

Configuration :

Single

Transistor Application :

AMPLIFIER

Gain :

8dB

Mount :

Chassis Mount

Number of Elements :

1

Max Power Dissipation :

400W

Highest Frequency Band :

L B

Transition Frequency :

1025MHz

Mounting Type :

Chassis Mount

Current - Collector (Ic) (Max) :

12A

Factory Lead Time :

13 Weeks

Pbfree Code :

No

Operating Temperature :

250°C TJ

Transistor Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

Base

Frequency - Transition :

1.025GHz~1.15GHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 1A 5V

Polarity/Channel Type :

NPN

JESD-609 Code :

e0

Packaging :

Bulk

Package / Case :

M218

RoHS Status :

RoHS Compliant

JESD-30 Code :

S-CDFM-F2

Qualification Status :

Not Qualified

Terminal Position :

Dual

Transistor Element Material :

SILICON

Number of Terminations :

2

Max Collector Current :

12A

Collector Emitter Breakdown Voltage :

65V

Pin Count :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Terminal Finish :

TIN LEAD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED