MS2393

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

RoHS Status :

RoHS Compliant

Max Power Dissipation :

583W

Terminal Position :

Dual

Polarity/Channel Type :

NPN

Number of Pins :

4

Collector Emitter Breakdown Voltage :

65V

Output Power :

150W

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 300mA 5V

Gain :

8.2dB

Published :

2004

Terminal Finish :

TIN LEAD

Frequency - Transition :

1.025GHz~1.15GHz

Pin Count :

2

Lead Free :

Lead Free

Mounting Type :

Chassis Mount

JESD-609 Code :

e0

Case Connection :

Base

Max Collector Current :

11A

Configuration :

Single

Collector Emitter Voltage (VCEO) :

65V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Additional Feature :

WITH EMITTER BALLASTED RESISTOR

Number of Terminations :

2

Transistor Application :

AMPLIFIER

Transistor Type :

NPN

Highest Frequency Band :

L B

Operating Temperature :

200°C TJ

Terminal Form :

Flat

JESD-30 Code :

S-CDFM-F2

Number of Elements :

1

Packaging :

Bulk

Pbfree Code :

No

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

583W

Collector Base Voltage (VCBO) :

65V

Mount :

Chassis Mount, Screw

Package / Case :

M138