MS2212

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Max Power Dissipation :

50W

Radiation Hardening :

No

Packaging :

Bulk

RoHS Status :

RoHS Compliant

Package / Case :

M222

Gain :

8.1dB ~ 8.9dB

Terminal Finish :

TIN LEAD

Number of Pins :

4

Transistor Element Material :

SILICON

Max Collector Current :

1.8A

Pin Count :

2

Collector Base Voltage (VCBO) :

55V

JESD-30 Code :

S-CDFM-F2

Transistor Application :

AMPLIFIER

Mount :

Chassis Mount, Screw

Terminal Form :

Flat

Case Connection :

Base

Mounting Type :

Chassis Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 500mA 5V

Highest Frequency Band :

L B

Additional Feature :

High Reliability

JESD-609 Code :

e0

Number of Terminations :

2

Collector Emitter Breakdown Voltage :

55V

Operating Temperature :

250°C TJ

Polarity/Channel Type :

NPN

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

No

Configuration :

Single

Max Frequency :

1.215GHz

Published :

2004

Terminal Position :

Dual

Transistor Type :

NPN

Frequency - Transition :

960MHz~1.215GHz