MS2205

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Power - Max :

21.9W

Collector Emitter Voltage (VCEO) :

20V

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 100mA 5V

Terminal Form :

Flat

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

200°C TJ

Output Power :

4W

Number of Elements :

1

Published :

2004

Gain :

9.5dB

JESD-609 Code :

e0

Pbfree Code :

No

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

45V

Pin Count :

2

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

45V

Mounting Type :

Chassis Mount

Packaging :

Bulk

Number of Terminations :

2

RoHS Status :

RoHS Compliant

Max Power Dissipation :

21.9W

Frequency - Transition :

1.025GHz~1.15GHz

Transistor Type :

NPN

Configuration :

Single

Terminal Position :

Dual

Terminal Finish :

TIN LEAD

Max Collector Current :

1A

Case Connection :

COLLECTOR

Number of Pins :

4

Package / Case :

M105

Mount :

Chassis Mount, Screw

Lead Free :

Lead Free

JESD-30 Code :

S-CDFM-F2

Min Breakdown Voltage :

28V

Polarity/Channel Type :

NPN

Transistor Application :

AMPLIFIER

Highest Frequency Band :

L B