MRF422

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Mfr.Part #
MRF422
Manufacturer
MACOM Technology Solutions
Package / Case
211-11, Style 2
Datasheet
Download
Description
RF TRANS NPN 35V 211-11
Stock
331
In Stock :
331

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Manufacturer :
MACOM Technology Solutions
Product Category :
Transistors - Bipolar (BJT) - RF
Number of Terminations :
4
Output Power :
150W
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Power Dissipation :
290W
Max Collector Current :
20A
Transistor Application :
AMPLIFIER
Mount :
Chassis Mount, Screw
Pin Count :
4
Gain :
13dB
Frequency :
30MHz
Pbfree Code :
yes
Packaging :
Tray
Factory Lead Time :
20 Weeks
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
40V
Package / Case :
211-11, Style 2
Number of Elements :
1
Collector Base Voltage (VCBO) :
85V
Emitter Base Voltage (VEBO) :
3V
Collector Emitter Breakdown Voltage :
35V
Terminal Form :
Flat
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
NPN
Max Power Dissipation :
290W
Continuous Collector Current :
20A
Min Operating Temperature :
-65°C
Terminal Position :
Radial
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 5A 5V
Transistor Type :
NPN
Number of Pins :
4
Published :
2009
Radiation Hardening :
No
Mounting Type :
Chassis Mount
Lead Free :
Lead Free
Max Operating Temperature :
150°C
hFE Min :
15
Datasheets
MRF422
Introducing Transistors - Bipolar (BJT) - RF MACOM Technology Solutions MRF422 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Gain:13dB, Package / Case:211-11, Style 2, Number of Pins:4, Mounting Type:Chassis Mount, MRF422 pinout, MRF422 datasheet PDF, MRF422 amp .Beyond Transistors - Bipolar (BJT) - RF MACOM Technology Solutions MRF422 ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

MACOM Technology Solutions MRF422


MRF422 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from M/A-Com Technology Solutions stock available at

The MA-COM MRF422 is a NPN Bipolar Junction Transistor (BJT) designed for use in RF applications. It has a maximum voltage rating of 35V and a maximum frequency rating of 211-11MHz. It is designed to provide high gain and low noise performance in a wide range of RF applications.

Features of the MA-COM MRF422 include a low noise figure of 1.5dB, a high gain of 15dB, and a high power output of up to 10W. It also has a high breakdown voltage of 35V and a low thermal resistance of 0.5°C/W.

Applications of the MA-COM MRF422 include RF amplifiers, RF power amplifiers, RF oscillators, RF mixers, and RF switches. It is also suitable for use in wireless communication systems, such as cellular phones, Wi-Fi, and Bluetooth.
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