MMDT4403

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Arrays

Element Configuration :

Dual

Current Rating :

-600mA

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

40V

Gain Bandwidth Product :

200MHz

Collector Emitter Breakdown Voltage :

40V

Turn On Time-Max (ton) :

35ns

Collector Base Voltage (VCBO) :

40V

Width :

1.35mm

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

-750mV

Collector Emitter Voltage (VCEO) :

40V

Polarity :

PNP

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

-5V

Factory Lead Time :

17 Weeks

Max Collector Current :

600mA

Transistor Element Material :

SILICON

hFE Min :

100

Mount :

Surface Mount

Height :

1mm

REACH SVHC :

No SVHC

Published :

2007

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Power Dissipation :

200mW

Length :

2.2mm

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Weight :

6.010099mg

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Voltage - Rated DC :

-40V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Max Power Dissipation :

200mW

Transition Frequency :

200MHz

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Type :

2 PNP (Dual)

JESD-609 Code :

e3

Frequency :

200MHz

Continuous Collector Current :

-600mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

ECCN Code :

EAR99

Number of Pins :

6

Terminal Form :

Gull wing