MMDT4146-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Length :

2.2mm

Max Breakdown Voltage :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Collector Base Voltage (VCBO) :

30V

Published :

2007

ECCN Code :

EAR99

Number of Pins :

6

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

25V

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

REACH SVHC :

No SVHC

Power Dissipation :

200mW

Packaging :

Tape and Reel (TR)

hFE Min :

120

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

235

Collector Emitter Breakdown Voltage :

25V

Package / Case :

SOT-363

Polarity :

NPN, PNP

Max Collector Current :

200mA

Terminal Finish :

Tin/Lead (Sn85Pb15)

Voltage - Rated DC :

40V

Element Configuration :

Dual

Frequency :

300MHz

Width :

1.35mm

Emitter Base Voltage (VEBO) :

4V

DC Current Gain-Min (hFE) :

60

Weight :

6.010099mg

Terminal Form :

Gull wing

Max Power Dissipation :

200mW

Height :

1mm

Time@Peak Reflow Temperature-Max (s) :

10

Number of Elements :

2

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Gain Bandwidth Product :

300MHz

Current Rating :

200mA

Transistor Application :

SWITCHING

Transition Frequency :

250MHz

JESD-609 Code :

e0