MMDT4126-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 1V

Number of Elements :

2

REACH SVHC :

No SVHC

Number of Terminations :

6

Published :

2007

Pin Count :

6

Length :

2.2mm

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

4V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

-200mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Pbfree Code :

yes

Transistor Application :

SWITCHING

Transition Frequency :

250MHz

Height :

1mm

Current - Collector Cutoff (Max) :

50nA ICBO

ECCN Code :

EAR99

Mount :

Surface Mount

Mounting Type :

Surface Mount

hFE Min :

100

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Current Rating :

-200mA

Collector Emitter Saturation Voltage :

-400mV

Weight :

6.010099mg

Voltage - Rated DC :

-25V

Frequency :

250MHz

Max Breakdown Voltage :

25V

Gain Bandwidth Product :

250MHz

Max Power Dissipation :

200mW

Element Configuration :

Dual

Polarity :

PNP

Transistor Type :

2 PNP (Dual)

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

25V

Max Collector Current :

200mA

Width :

1.35mm

Collector Emitter Breakdown Voltage :

25V

Number of Pins :

6

Factory Lead Time :

15 Weeks

Collector Emitter Voltage (VCEO) :

25V

Power Dissipation :

200mW

Radiation Hardening :

No

Base Part Number :

MMDT4126