MMDT3906V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Emitter Base Voltage (VEBO) :

5V

Element Configuration :

Dual

Transistor Type :

2 PNP (Dual)

Additional Feature :

High Reliability

Width :

1.2mm

hFE Min :

60

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

40V

Collector Base Voltage (VCBO) :

40V

Collector Emitter Voltage (VCEO) :

40V

Frequency :

250MHz

Turn On Time-Max (ton) :

70ns

Mounting Type :

Surface Mount

Radiation Hardening :

No

Transition Frequency :

250MHz

Power Dissipation :

150mW

Factory Lead Time :

26 Weeks

Turn Off Time-Max (toff) :

300ns

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Max Collector Current :

200mA

Polarity :

PNP

Lead Free :

Lead Free

Number of Pins :

6

Gain Bandwidth Product :

250MHz

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Length :

1.6mm

Transistor Application :

SWITCHING

Package / Case :

SOT-563, SOT-666

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

600μm

Max Power Dissipation :

150mW

Number of Terminations :

6

Number of Elements :

2

Weight :

3.005049mg

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Published :

2005

Pin Count :

6

Operating Temperature :

-55°C~150°C TJ