MMDT3904VC-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

300mV

Polarity :

NPN

Emitter Base Voltage (VEBO) :

6V

Frequency :

300MHz

Transition Frequency :

300MHz

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

200mW

Element Configuration :

Dual

Turn On Time-Max (ton) :

70ns

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Length :

1.6mm

Voltage - Rated DC :

40V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Transistor Type :

2 NPN (Dual)

Max Power Dissipation :

200mW

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Base Part Number :

MMDT3904VC

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Weight :

3.005049mg

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

40V

Number of Terminations :

6

Package / Case :

SOT-563, SOT-666

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Collector Base Voltage (VCBO) :

60V

Number of Pins :

6

Pin Count :

6

Max Collector Current :

200mA

hFE Min :

40

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

600μm

Terminal Form :

Flat

Factory Lead Time :

19 Weeks

Collector Emitter Breakdown Voltage :

40V

Current Rating :

200mA

Width :

1.2mm

Max Breakdown Voltage :

40V

Gain Bandwidth Product :

300MHz

Pbfree Code :

yes