MMDT3904V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

2 NPN (Dual)

Collector Base Voltage (VCBO) :

60V

Power Dissipation :

200mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

6V

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Continuous Collector Current :

200mA

Element Configuration :

Dual

Collector Emitter Saturation Voltage :

300mV

ECCN Code :

EAR99

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

40V

Length :

1.6mm

Max Power Dissipation :

200mW

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

Gain Bandwidth Product :

300MHz

Published :

2007

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Current Rating :

200mA

Collector Emitter Breakdown Voltage :

40V

RoHS Status :

ROHS3 Compliant

Height :

600μm

Transistor Element Material :

SILICON

Pbfree Code :

yes

Factory Lead Time :

19 Weeks

hFE Min :

100

Width :

1.2mm

REACH SVHC :

No SVHC

Number of Elements :

2

Max Collector Current :

200mA

Max Breakdown Voltage :

40V

Pin Count :

6

Turn On Time-Max (ton) :

70ns

Termination :

SMD/SMT

Transition Frequency :

300MHz

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Pins :

6

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Weight :

3.005049mg

Frequency :

300MHz

Voltage - Rated DC :

40V

Base Part Number :

MMDT3904V