MMDFS6N303R2
- Mfr.Part #
- MMDFS6N303R2
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6A 8SOIC
- Stock
- 23,148
- In Stock :
- 23,148
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 6A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current Rating :
- 6A
- Number of Elements :
- 1
- FET Type :
- N-Channel
- JESD-609 Code :
- e0
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- FETKY™
- Drain-source On Resistance-Max :
- 0.035Ohm
- Terminal Position :
- Dual
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2004
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Lead Free :
- Contains Lead
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 5A, 10V
- JESD-30 Code :
- R-PDSO-G8
- RoHS Status :
- Non-RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 30A
- Mount :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 6A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 2W Ta
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 30V
- Number of Terminations :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 31.4nC @ 10V
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 600pF @ 24V
- Current - Continuous Drain (Id) @ 25°C :
- 6A Ta
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 8
- Avalanche Energy Rating (Eas) :
- 325 mJ
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Datasheets
- MMDFS6N303R2

N-Channel Tape & Reel (TR) 35m Ω @ 5A, 10V ±20V 600pF @ 24V 31.4nC @ 10V 8-SOIC (0.154, 3.90mm Width)
MMDFS6N303R2 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 325 mJ.The maximum input capacitance of this device is 600pF @ 24V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6A.As shown in the table below, the drain current of this device is 6A.There is no pulsed drain current maximum for this device based on its rated peak drain current 30A.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
MMDFS6N303R2 Features
the avalanche energy rating (Eas) is 325 mJ
a continuous drain current (ID) of 6A
based on its rated peak drain current 30A.
MMDFS6N303R2 Applications
There are a lot of ON Semiconductor
MMDFS6N303R2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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