MMBTA92LT3G
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- Mfr.Part #
- MMBTA92LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A SOT23-3
- Stock
- 6,022
- In Stock ：
- 6,022
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 50mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Saturation Voltage :
- -500mV
- Terminal Position :
- Dual
- Published :
- 2007
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 300V
- Collector Emitter Voltage (VCEO) :
- 300V
- Power Dissipation :
- 300mW
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 300V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transition Frequency :
- 50MHz
- Number of Elements :
- 1
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 25
- Transistor Type :
- PNP
- Frequency :
- 50MHz
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 225mW
- Voltage - Rated DC :
- -300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 500mA
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Surface Mount :
- yes
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Gain Bandwidth Product :
- 50MHz
- Number of Terminations :
- 3
- Base Part Number :
- MMBTA92
- Current Rating :
- -500mA
- Terminal Form :
- Gull wing
- Datasheets
- MMBTA92LT3G
MMBTA92LT3G Documents
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA92LT3G Overview
DC current gain in this device equals 25 @ 30mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 50MHz.In extreme cases, the collector current can be as low as 50mA volts.
MMBTA92LT3G Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MMBTA92LT3G Applications
There are a lot of ON Semiconductor
MMBTA92LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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