MMBTA70LT1G
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- Mfr.Part #
- MMBTA70LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.1A SOT23-3
- Stock
- 22,538
- In Stock ：
- 22,538
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 125MHz
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Current - Collector (Ic) (Max) :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Power - Max :
- 225mW
- Supplier Device Package :
- SOT-23-3 (TO-236)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 5mA 10V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- MMBTA70LT1G
PNP -55°C~150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA70LT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 5mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 1mA, 10mA.The product comes in the supplier device package of SOT-23-3 (TO-236).A 40V maximal voltage - Collector Emitter Breakdown is present in the device.
MMBTA70LT1G Features
the DC current gain for this device is 40 @ 5mA 10V
the vce saturation(Max) is 250mV @ 1mA, 10mA
the supplier device package of SOT-23-3 (TO-236)
MMBTA70LT1G Applications
There are a lot of Rochester Electronics, LLC
MMBTA70LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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