MMBTA64LT3G
- Mfr.Part #
- MMBTA64LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A SOT23-3
- Stock
- 80
- In Stock :
- 80
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Base Part Number :
- MMBTA64
- Terminal Finish :
- Tin (Sn)
- Published :
- 2008
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Polarity :
- PNP
- Surface Mount :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Number of Terminations :
- 3
- Halogen Free :
- Halogen Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 225mW
- Terminal Position :
- Dual
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 30V
- Pbfree Code :
- yes
- Max Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 1.5V
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 125MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Emitter Base Voltage (VEBO) :
- 10V
- Collector Emitter Breakdown Voltage :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 125MHz
- Factory Lead Time :
- 11 Weeks
- Max Power Dissipation :
- 225mW
- Transistor Type :
- PNP - Darlington
- Datasheets
- MMBTA64LT3G

PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA64LT3G Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.Keeping the emitter base voltage at 10V allows for a high level of efficiency.125MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
MMBTA64LT3G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
MMBTA64LT3G Applications
There are a lot of ON Semiconductor
MMBTA64LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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