MMBTA64LT3G
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- Mfr.Part #
- MMBTA64LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A SOT23-3
- Stock
- 80
- In Stock ：
- 80
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 225mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Qualification Status :
- Not Qualified
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 10V
- Number of Terminations :
- 3
- Halogen Free :
- Halogen Free
- Transition Frequency :
- 125MHz
- Polarity :
- PNP
- Base Part Number :
- MMBTA64
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 500mA
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Transistor Type :
- PNP - Darlington
- Pin Count :
- 3
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Max Power Dissipation :
- 225mW
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2008
- JESD-609 Code :
- e3
- Frequency - Transition :
- 125MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Collector Base Voltage (VCBO) :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Saturation Voltage :
- 1.5V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Factory Lead Time :
- 11 Weeks
- Datasheets
- MMBTA64LT3G
MMBTA64LT3G Documents
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA64LT3G Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.Keeping the emitter base voltage at 10V allows for a high level of efficiency.125MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
MMBTA64LT3G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
MMBTA64LT3G Applications
There are a lot of ON Semiconductor
MMBTA64LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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