MMBTA64LT3G

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Mfr.Part #
MMBTA64LT3G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP DARL 30V 0.5A SOT23-3
Stock
80
In Stock :
80

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lead Free :
Lead Free
Base Part Number :
MMBTA64
Terminal Finish :
Tin (Sn)
Published :
2008
Packaging :
Tape and Reel (TR)
Transistor Element Material :
SILICON
Number of Pins :
3
Polarity :
PNP
Surface Mount :
yes
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Number of Terminations :
3
Halogen Free :
Halogen Free
Time@Peak Reflow Temperature-Max (s) :
40
Power Dissipation :
225mW
Terminal Position :
Dual
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Collector Emitter Voltage (VCEO) :
30V
Pbfree Code :
yes
Max Collector Current :
500mA
Collector Emitter Saturation Voltage :
1.5V
ECCN Code :
EAR99
Terminal Form :
Gull wing
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
260
Pin Count :
3
Collector Base Voltage (VCBO) :
30V
Mounting Type :
Surface Mount
Frequency - Transition :
125MHz
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max) :
100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
20000 @ 100mA 5V
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Qualification Status :
Not Qualified
Emitter Base Voltage (VEBO) :
10V
Collector Emitter Breakdown Voltage :
30V
Package / Case :
TO-236-3, SC-59, SOT-23-3
Transition Frequency :
125MHz
Factory Lead Time :
11 Weeks
Max Power Dissipation :
225mW
Transistor Type :
PNP - Darlington
Datasheets
MMBTA64LT3G
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBTA64LT3G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MMBTA64, Number of Pins:3, Number of Terminations:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, MMBTA64LT3G pinout, MMBTA64LT3G datasheet PDF, MMBTA64LT3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBTA64LT3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBTA64LT3G


PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBTA64LT3G Overview


In this device, the DC current gain is 20000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.Keeping the emitter base voltage at 10V allows for a high level of efficiency.125MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.

MMBTA64LT3G Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz


MMBTA64LT3G Applications


There are a lot of ON Semiconductor
MMBTA64LT3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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