MMBTA64LT1G

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Mfr.Part #
MMBTA64LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP DARL 30V 0.5A SOT23-3
Stock
8,881
In Stock :
8,881

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
1998
Terminal Form :
Gull wing
Collector Emitter Saturation Voltage :
1.5V
Length :
3.04mm
Terminal Position :
Dual
Halogen Free :
Halogen Free
Number of Terminations :
3
Mounting Type :
Surface Mount
REACH SVHC :
No SVHC
Package / Case :
TO-236-3, SC-59, SOT-23-3
Collector Base Voltage (VCBO) :
30V
Height :
1.01mm
Emitter Base Voltage (VEBO) :
10V
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Max Collector Current :
500mA
Frequency - Transition :
125MHz
Transistor Type :
PNP - Darlington
Pbfree Code :
yes
Power Dissipation :
225mW
Time@Peak Reflow Temperature-Max (s) :
40
Current Rating :
-500mA
Width :
1.4mm
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
ECCN Code :
EAR99
Transition Frequency :
125MHz
Element Configuration :
Single
Surface Mount :
yes
Number of Pins :
3
Max Power Dissipation :
225mW
Voltage - Rated DC :
-30V
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
20000 @ 100mA 5V
Number of Elements :
1
Polarity :
PNP
Operating Temperature :
-55°C~150°C TJ
Base Part Number :
MMBTA64
Collector Emitter Voltage (VCEO) :
30V
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Packaging :
Tape and Reel (TR)
Continuous Collector Current :
-500mA
Contact Plating :
Tin
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Collector Emitter Breakdown Voltage :
30V
Current - Collector Cutoff (Max) :
100nA ICBO
hFE Min :
10000
Factory Lead Time :
11 Weeks
Max Breakdown Voltage :
30V
Radiation Hardening :
No
Datasheets
MMBTA64LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBTA64LT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Base Part Number:MMBTA64, MMBTA64LT1G pinout, MMBTA64LT1G datasheet PDF, MMBTA64LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBTA64LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBTA64LT1G


PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBTA64LT1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20000 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -500mA.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 125MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 500mA volts.

MMBTA64LT1G Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz


MMBTA64LT1G Applications


There are a lot of ON Semiconductor
MMBTA64LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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