MMBTA64LT1

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Mfr.Part #
MMBTA64LT1
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS SS DARL PNP 30V SOT23
Stock
4,883
In Stock :
4,883

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-236-3, SC-59, SOT-23-3
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Length :
3.04mm
Published :
1998
Element Configuration :
Single
Transistor Type :
PNP - Darlington
Surface Mount :
yes
Base Part Number :
MMBTA64
Time@Peak Reflow Temperature-Max (s) :
40
ECCN Code :
EAR99
Frequency - Transition :
125MHz
Current - Collector Cutoff (Max) :
100nA ICBO
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Emitter Base Voltage (VEBO) :
10V
Continuous Collector Current :
-500mA
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
30V
Polarity :
PNP
Radiation Hardening :
No
Voltage - Rated DC :
-30V
Pin Count :
3
Power Dissipation :
225mW
Max Collector Current :
500mA
Packaging :
Tape and Reel (TR)
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~150°C TJ
Halogen Free :
Halogen Free
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Max Breakdown Voltage :
30V
Height :
1.01mm
Peak Reflow Temperature (Cel) :
260
Current Rating :
-500mA
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Collector Base Voltage (VCBO) :
30V
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Max Power Dissipation :
225mW
Contact Plating :
Tin
hFE Min :
10000
Collector Emitter Saturation Voltage :
1.5V
Transition Frequency :
125MHz
Width :
1.4mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
20000 @ 100mA 5V
Terminal Position :
Dual
Number of Elements :
1
Factory Lead Time :
11 Weeks
JESD-609 Code :
e3
Number of Terminations :
3
Collector Emitter Breakdown Voltage :
30V
Transistor Element Material :
SILICON
Pbfree Code :
yes
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBTA64LT1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Base Part Number:MMBTA64, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, MMBTA64LT1 pinout, MMBTA64LT1 datasheet PDF, MMBTA64LT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBTA64LT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBTA64LT1


PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBTA64LT1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20000 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -500mA.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 125MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 500mA volts.

MMBTA64LT1G Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz


MMBTA64LT1G Applications


There are a lot of ON Semiconductor
MMBTA64LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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