MMBTA64LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Height :

1.01mm

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Mounting Type :

Surface Mount

Factory Lead Time :

11 Weeks

Number of Elements :

1

Transistor Type :

PNP - Darlington

Length :

3.04mm

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

30V

Base Part Number :

MMBTA64

Pbfree Code :

yes

Published :

1998

Voltage - Rated DC :

-30V

Number of Terminations :

3

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

hFE Min :

10000

Collector Base Voltage (VCBO) :

30V

Frequency - Transition :

125MHz

Pin Count :

3

Terminal Position :

Dual

Continuous Collector Current :

-500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

20000 @ 100mA 5V

Max Collector Current :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Surface Mount :

yes

Current Rating :

-500mA

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Width :

1.4mm

Polarity :

PNP

Collector Emitter Saturation Voltage :

1.5V

Halogen Free :

Halogen Free

Collector Emitter Voltage (VCEO) :

30V

Element Configuration :

Single

Power Dissipation :

225mW

Collector Emitter Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

125MHz

Max Power Dissipation :

225mW

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Transistor Element Material :

SILICON