MMBTA64
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- Mfr.Part #
- MMBTA64
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 1.2A SOT23-3
- Stock
- 14,933
- In Stock ：
- 14,933
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 350mW
- Supplier Device Package :
- SOT-23
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Radiation Hardening :
- No
- Weight :
- 30mg
- Height :
- 930μm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 350mW
- Emitter Base Voltage (VEBO) :
- 10V
- Factory Lead Time :
- 14 Weeks
- Packaging :
- Tape and Reel (TR)
- Width :
- 1.3mm
- Voltage - Rated DC :
- -30V
- Length :
- 2.92mm
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Type :
- PNP - Darlington
- hFE Min :
- 20000
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 150°C
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 1.2A
- Frequency - Transition :
- 125MHz
- Current Rating :
- -1.2A
- Polarity :
- PNP
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2011
- Max Collector Current :
- 1.2A
- Base Part Number :
- MMBTA64
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 30V
- Power Dissipation :
- 350mW
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 1.5V
- Datasheets
- MMBTA64
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA64 Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of -1.2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 30V volts can be used.Product package SOT-23 comes from the supplier.Collector Emitter Breakdown occurs at 30VV - Maximum voltage.A maximum collector current of 1.2A volts is possible.
MMBTA64 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -1.2A
the supplier device package of SOT-23
MMBTA64 Applications
There are a lot of ON Semiconductor
MMBTA64 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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