MMBTA63LT1G
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- Mfr.Part #
- MMBTA63LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A SOT23-3
- Stock
- 2,637
- In Stock ：
- 2,637
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 500mA
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 10V
- Radiation Hardening :
- No
- Transition Frequency :
- 125MHz
- Transistor Type :
- PNP - Darlington
- Frequency - Transition :
- 125MHz
- Number of Terminations :
- 3
- Factory Lead Time :
- 12 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 225mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -500mA
- Voltage - Rated DC :
- -30V
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 1.01mm
- Collector Base Voltage (VCBO) :
- 30V
- Pin Count :
- 3
- Packaging :
- Cut Tape (CT)
- Contact Plating :
- Tin
- Continuous Collector Current :
- -500mA
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 30V
- hFE Min :
- 5000
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Weight :
- 4.535924g
- Base Part Number :
- MMBTA63
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Length :
- 3.04mm
- Width :
- 1.4mm
- Polarity :
- PNP
- Published :
- 2005
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 1.5V
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Power Dissipation :
- 225mW
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Halogen Free :
- Halogen Free
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Datasheets
- MMBTA63LT1G
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
MMBTA63LT1G Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 125MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 500mA volts is possible.
MMBTA63LT1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMBTA63LT1G Applications
There are a lot of ON Semiconductor
MMBTA63LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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