MMBTA63LT1G
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- Mfr.Part #
- MMBTA63LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A SOT23-3
- Stock
- 2,637
- In Stock ：
- 2,637
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 10V
- Frequency - Transition :
- 125MHz
- Current Rating :
- -500mA
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 3.04mm
- Transition Frequency :
- 125MHz
- Collector Emitter Saturation Voltage :
- 1.5V
- Collector Base Voltage (VCBO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 4.535924g
- Collector Emitter Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Number of Pins :
- 3
- Max Power Dissipation :
- 225mW
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Type :
- PNP - Darlington
- Factory Lead Time :
- 12 Weeks
- Height :
- 1.01mm
- Contact Plating :
- Tin
- Voltage - Rated DC :
- -30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Pin Count :
- 3
- Published :
- 2005
- Max Breakdown Voltage :
- 30V
- Surface Mount :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Polarity :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 225mW
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- -500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 1.4mm
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Number of Elements :
- 1
- Base Part Number :
- MMBTA63
- hFE Min :
- 5000
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Cut Tape (CT)
- Max Collector Current :
- 500mA
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Datasheets
- MMBTA63LT1G
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
MMBTA63LT1G Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 125MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 500mA volts is possible.
MMBTA63LT1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMBTA63LT1G Applications
There are a lot of ON Semiconductor
MMBTA63LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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