MMBTA63LT1

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Mfr.Part #
MMBTA63LT1
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS SS DARL PNP 30V SOT23
Stock
34,740
In Stock :
34,740

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-236-3, SC-59, SOT-23-3
Current - Collector Cutoff (Max) :
100nA ICBO
Current Rating :
-500mA
Width :
1.4mm
Halogen Free :
Halogen Free
Weight :
4.535924g
Collector Emitter Breakdown Voltage :
30V
Base Part Number :
MMBTA63
JESD-609 Code :
e3
Radiation Hardening :
No
Pin Count :
3
hFE Min :
5000
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 100mA 5V
Max Collector Current :
500mA
Number of Terminations :
3
Frequency - Transition :
125MHz
Lead Free :
Lead Free
Terminal Position :
Dual
Terminal Form :
Gull wing
Emitter Base Voltage (VEBO) :
10V
Polarity :
PNP
Time@Peak Reflow Temperature-Max (s) :
40
Length :
3.04mm
Peak Reflow Temperature (Cel) :
260
Max Breakdown Voltage :
30V
Transistor Type :
PNP - Darlington
ECCN Code :
EAR99
Surface Mount :
yes
Mounting Type :
Surface Mount
Height :
1.01mm
Contact Plating :
Tin
Transition Frequency :
125MHz
Factory Lead Time :
12 Weeks
Collector Base Voltage (VCBO) :
30V
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Pbfree Code :
yes
Max Power Dissipation :
225mW
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Voltage - Rated DC :
-30V
Continuous Collector Current :
-500mA
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Published :
2005
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
REACH SVHC :
No SVHC
Collector Emitter Voltage (VCEO) :
30V
Power Dissipation :
225mW
Packaging :
Cut Tape (CT)
Collector Emitter Saturation Voltage :
1.5V
Datasheets
MMBTA63LT1
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBTA63LT1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Base Part Number:MMBTA63, Number of Terminations:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, MMBTA63LT1 pinout, MMBTA63LT1 datasheet PDF, MMBTA63LT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBTA63LT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBTA63LT1


PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount

MMBTA63LT1G Overview


This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 125MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 500mA volts is possible.

MMBTA63LT1G Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz


MMBTA63LT1G Applications


There are a lot of ON Semiconductor
MMBTA63LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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