MMBTA63LT1
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- Mfr.Part #
- MMBTA63LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS SS DARL PNP 30V SOT23
- Stock
- 34,740
- In Stock ：
- 34,740
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Elements :
- 1
- Height :
- 1.01mm
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 30V
- Frequency - Transition :
- 125MHz
- Max Power Dissipation :
- 225mW
- ECCN Code :
- EAR99
- Transition Frequency :
- 125MHz
- hFE Min :
- 5000
- Max Breakdown Voltage :
- 30V
- Published :
- 2005
- Continuous Collector Current :
- -500mA
- Collector Emitter Voltage (VCEO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 10V
- Pin Count :
- 3
- Polarity :
- PNP
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -30V
- Factory Lead Time :
- 12 Weeks
- Number of Terminations :
- 3
- Current Rating :
- -500mA
- Width :
- 1.4mm
- Length :
- 3.04mm
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Power Dissipation :
- 225mW
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- MMBTA63
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Halogen Free :
- Halogen Free
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Weight :
- 4.535924g
- Collector Emitter Saturation Voltage :
- 1.5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Packaging :
- Cut Tape (CT)
- Max Collector Current :
- 500mA
- Element Configuration :
- Single
- Transistor Type :
- PNP - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Datasheets
- MMBTA63LT1
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
MMBTA63LT1G Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 125MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 500mA volts is possible.
MMBTA63LT1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMBTA63LT1G Applications
There are a lot of ON Semiconductor
MMBTA63LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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